PART |
Description |
Maker |
IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
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SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
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BIR-BM13V4V-2 |
END-LOOK PACKAGE IGHT EMITTING DIODE
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Bright LED Electronics Corp.
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SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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SemeLAB SEME-LAB[Seme LAB]
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SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SEME-LAB[Seme LAB] SemeLAB
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IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
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SemeLAB Seme LAB International Rectifier http://
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IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))
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Seme LAB
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2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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Vishay Siliconix Vishay Intertechnology,Inc.
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0541323297 0541323397 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
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Molex Electronics Ltd.
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24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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0545480570 0545480870 0545482070 0545481070 54548- |
0.5 FPC CONN ZIF HSG ASSY FOR SMT RA BTM CONT -LEAD FREE-
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Molex Electronics Ltd.
|
3-84953-0 |
FPC ( Flexible Printed Circuit ) Connectors; 1MM FPC HORZ.TOP CONT.ASSY 30P ( AMP )
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Tyco Electronics
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HYB18L2561 HYE25L256160AC-7.5 HYE25L256160AF-7.5 H |
HEX DIE SET,.052/.068/.100/.21 RT ANG PCB CONT .40/1.295 BULK BJAWBMSpecialty DRAMs Mobile-RAM BJAWBMSpecialty DRAM的移动RAM
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http:// INFINEON[Infineon Technologies AG]
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